sot-23 plastic-encapsulate diodes bat54/a/c/s schottky barrier diode features z extremely fast switching speed maximum ratings ( t a =25 unless otherwise noted ) parameter symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 30 v forward continuous current i fm 200 ma non-repetitive peak forward surge current @ t 1s i fsm 600 ma repetitive peak forward current @ t 1s, ? 0.5 i frm 300 ma power dissipation p d 200 mw thermal resistance from junction to ambient r ja 500 /w junction temperature t j 125 storage temperature t stg -55~+150 electrical characteristics(t a =25 unless otherwise specified) parameter symbol min typ max unit test conditions reverse voltage v (br) 30 v i r =100 a forward voltage v f 0.24 v i f1 =0.1ma 0.32 v i f2 =1ma 0.40 v i f3 =10ma 0.50 v i f4 =30ma 1 v i f5 =100ma reverse current i r 2 a v r =25v diode capacitance c d 10 pf v r =1v,f=1mhz reverse recovery time t rr 5 ns i f =i r =10ma irr=0.1 i r ,r l =100 sot-23 c,mar,2014 dongguan nanjing electronics ltd., c,mar,2014
0 5 10 15 20 25 30 0 4 8 12 16 20 0 25 50 75 100 125 150 0 50 100 150 200 250 300 0 200 400 600 800 1000 0.01 0.1 1 10 100 1000 0 5 10 15 20 25 30 0.01 0.1 1 10 100 t a =25 f=1mhz capacitance characteristics reverse voltage v r (v) capacitance between terminals c t (pf) power derating curve power dissipation p d (mw) ambient temperature t a ( ) forward characteristics t a =10 0 o c t a = 2 5 o c forward current i f (ma) forward voltage v f (mv) reverse characteristics bat54/a/c/s typical characteristics t a =100 o c t a =25 o c reverse current i r (ua) reverse voltage v r (v) c,mar,2014
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